2DB1386R-13

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

5 A

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 500mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1 W

Product Status :

Active

Supplier Device Package :

SOT-89-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 4A

Voltage - Collector Emitter Breakdown (Max) :

20 V