2DB1188P-13

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 500mA, 3V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

SOT-89-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

32 V