G4616

Производитель :

Goford Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

8A (Tc), 7A (Tc)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V, 13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 20V, 520pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power - Max :

2W (Tc), 2.8W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 250µA