G20N06D52

Производитель :

Goford Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

45W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

30mOhm @ 20A, 10V

Supplier Device Package :

8-DFN (4.9x5.75)

Vgs(th) (Max) @ Id :

2.5V @ 250µA