G10N03S

Производитель :

Goford Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

839 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

2.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12mOhm @ 6A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA