G3035L

Производитель :

Goford Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

4.1A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

1.4W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

59mOhm @ 2.1A, 10V

Supplier Device Package :

SOT-23-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA