G50N03J

Производитель :

Goford Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

65A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1255 pF @ 15 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation (Max) :

48W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7mOhm @ 20A, 10V

Supplier Device Package :

TO-251

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA